Guest Editorial: The dawn of gallium oxide microelectronics

By Masataka Higashiwaki, Gregg H. Jessen. 2018

597 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/9a76115b839b431d5da7c8d34f300393d1b04903

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Kei May Lau
2. Xing Lu
3. K. Ng
4. Xianda Zhou
5. Huaxing Jiang
6. Gang Wang
7. Y. Pei
8. Zimin Chen

Citations in the corpus

• 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020, background): “8 eV and high breakdown electric field (EC) [1], [2].”
• Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, unknown): “platform [4].”