Akito Kuramata
Electronic, Optical and Magnetic Materials · 2012–2018
A researcher in the Science corpus: 23 papers; trusts 5 researchers and is trusted by 27 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 235 citations into it; #118 of 2,886 by trust here, #275 by citations
- Materials Chemistry — 217 citations into it; #824 of 11,513 by trust here, #896 by citations
- Renewable Energy, Sustainability and the Environment — 144 citations into it; #1,105 of 5,212 by trust here, #769 by citations
Whom Akito Kuramata trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Akito Kuramata overall
- Hongpeng Zhang
- Masataka Higashiwaki
- Kohei Sasaki
- Lei Yuan
- Z. Galazka
- Xiaoyan Tang
- E. Ahmadi
- Man Hoi Wong
- Jiancheng Yang
- H. von Wenckstern
Papers from Akito Kuramata's perspective
Ordered by how strongly the researchers Akito Kuramata trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- Semiconductor Power Devices: Physics, Characteristics, Reliability
- Fundamentals of Power Semiconductor Devices
- III-Nitride Ultraviolet Emitters: Technology and Applications
Their papers
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates (2012) — 1,532 citations
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy (2012) — 405 citations
- Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts (2013) — 232 citations
- Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics (2013) — 670 citations
- High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth (2016) — 667 citations
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016) — 451 citations
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes (2017) — 508 citations
- State-of-the-art technologies of gallium oxide power devices (2017) — 260 citations
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017) — 141 citations
- Development of gallium oxide power devices (2014) — 510 citations
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018) — 222 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Anisotropic thermal conductivity in single crystal β-gallium oxide (2014) — 514 citations
- Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors (2018) — 140 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Perspective—Opportunities and Future Directions for Ga2O3 (2017) — 422 citations
- Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions (2014) — 197 citations
- Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (2014) — 265 citations
- High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 (2017) — 169 citations
- 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers (2018) — 170 citations