M. Baldini

Electronic, Optical and Magnetic Materials · IEEE Electron Device Letters · 2014–2017

A researcher in the Science corpus: 7 papers; trusts 4 researchers and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom M. Baldini trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Z. Galazka
  2. Masataka Higashiwaki
  3. Kohei Sasaki
  4. Akito Kuramata
  5. J. Varley

Who trusts M. Baldini overall

  1. Z. Galazka

Papers from M. Baldini's perspective

Ordered by how strongly the researchers M. Baldini trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
  2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
  3. The formation of molecular clouds in spiral galaxies
  4. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
  5. Oxygen vacancies and donor impurities in β-Ga2O3
  6. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
  7. Czochralski growth and characterization of β‐Ga2O3 single crystals
  8. Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
  9. Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
  10. High-performance single layered WSe₂ p-FETs with chemically doped contacts. (Nano letters (Print))

Their papers