Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
By Masataka Higashiwaki, Kohei Sasaki, T. Kamimura, Man Hoi Wong, D. Krishnamurthy, Akito Kuramata, T. Masui, Shigenobu Yamakoshi. 2013
670 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5093a792e8240e7e27e2aad02d6cf93dae7279db
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In Electronic, Optical and Magnetic Materials
- Z. Galazka
- Akito Kuramata
- Masataka Higashiwaki
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
- Xiaoyan Tang
In Materials Chemistry
- Z. Galazka
- Masataka Higashiwaki
- Akito Kuramata
- Lei Yuan
- Yuming Zhang
- Renxu Jia
- Hongpeng Zhang
- Xiaoyan Tang
Citations in the corpus
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (2016, background): “A Si-ion (Si+) implantation doping technique for fabricating single-crystal n-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on unintentionally-doped (UID) epilayers has been established to realize low contact resistance and reliable channel conductivity [7], leading to promising”