Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
By Hisashi Murakami, K. Nomura, K. Goto, Kohei Sasaki, K. Kawara, Q. Thieu, R. Togashi, Yoshinao Kumagai, Masataka Higashiwaki, Akito Kuramata and 3 more. 2014
265 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/89d7e7ee73ae30ffd4afd135810303a6a65deba2
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
In Renewable Energy, Sustainability and the Environment
Citations in the corpus
- Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, background): “epitaxy (MBE) [1,15–19], pulsed-laser deposition (PLD) [20], halide vapor phase epitaxy (HVPE) [21], and MIST epitaxy [22].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “By using a post chemical mechanical polishing process to smooth the surface of HVPE grown films, the technique was further optimized [72].”