Hongpeng Zhang
Materials Chemistry · 2020
A researcher in the Science corpus: 1 paper; trusts 6 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 60 citations into it
- Electronic, Optical and Magnetic Materials — 56 citations into it
- Renewable Energy, Sustainability and the Environment — 31 citations into it
- Electrical and Electronic Engineering — 15 citations into it
Whom Hongpeng Zhang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Kohei Sasaki
- Akito Kuramata
- Masataka Higashiwaki
- Tsunenobu Kimoto
- Man Hoi Wong
- Z. Galazka
- Shigenobu Yamakoshi
- Ke Zeng
- T. Masui
- S. Pearton
Papers from Hongpeng Zhang's perspective
Ordered by how strongly the researchers Hongpeng Zhang trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- State-of-the-art technologies of gallium oxide power devices
- High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
- Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
- Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
- Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
- Fundamentals of Power Semiconductor Devices
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)
Their papers
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020) — 141 citations