First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes

By Kohei Sasaki, D. Wakimoto, Q. Thieu, Y. Koishikawa, Akito Kuramata, Masataka Higashiwaki, Shigenobu Yamakoshi. IEEE Electron Device Letters, 2017

141 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0ea9da48b45ef204d1654de22d80d1f42d730144

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In Electronic, Optical and Magnetic Materials

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Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “Besides, those high-k dielectrics could also be used as a passivation layer in field plate termination structure for Ga2O3 power devices to maximize the breakdown voltage by suppressing the electric field or smoothing the electric field distribution, which has been studied for Ga2O3 SBDs by technolo”
• Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, background): “Benchmark plot of state-of-the-art β-Ga2O3 SBDs, including lateral [5], [25], vertical [10]–[12], [17], [18], [26], [27] and trench SBDs [21], [14]–[16].”