1-kV vertical Ga2O3 field-plated Schottky barrier diodes
By K. Konishi, K. Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki. 2017
508 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/40b1efedc3f990cb50526ec8f3ba1c2eb9a6741d
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In Electronic, Optical and Magnetic Materials
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Uttam Singisetti
- Kohei Sasaki
- Ke Zeng
- Z. Galazka
- H. von Wenckstern
In Materials Chemistry
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Uttam Singisetti
- Kohei Sasaki
- Ke Zeng
- Debdeep Jena
- Huili Grace Xing
Citations in the corpus
- Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2 (2020, background): “Benchmark plot of state-of-the-art β-Ga2O3 SBDs, including lateral [5], [25], vertical [10]–[12], [17], [18], [26], [27] and trench SBDs [21], [14]–[16].”
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “1 MV/cm in vertical Schottky barrier diodes [9], [12].”
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018, background): “Vertical Schottky diodes on n-type bulk substrates [17] and halide vapor phase epitaxial (HVPE) structures [18] are also developed, showing the potential of high-voltage Ga2O3 devices.”
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017, background): “In the past few years, several researches on development of Ga2O3 Schottky barrier diodes (SBDs) were reported [12]–[17].”