Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
By Man Hoi Wong, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki. IEEE Electron Device Letters, 2016
451 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7322f7e136a435dfee65ddf5ab0fcecc4ae0cc8e
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, methodology): “electric fields in the channel of field-plate β-Ga2O3 MOSFET [22], [171] for a series of device dimensions (LFP,D and hFP , Lgd), which reflects the significance of optimizing the field-plate dimensions; temperature-dependent transfer characteristics of”
- Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage (2020, background): “A good electron mobility gives a high Baliga’s Figure of Merit (BFoM) [1]–[4].”
- Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2 (2018, background): “electron mobility of 300 cm2/Vs and high Baliga’s Figure of Merit (BFOM) of 3444, defined as γμEc, where γ, μ and Ec are the dielectric constant, carrier mobility and critical breakdown field (Ec), respectively [1]–[8].”
- 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “To date, the highest experimentally reported breakdown voltage (VB R) in lateral MOSFET is 750V with field plate [10].”