$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
By Kohei Sasaki, Masataka Higashiwaki, A. Kuramata, T. Masui, Shigenobu Yamakoshi. IEEE Electron Device Letters, 2013
173 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/87e1d4a95667440a18349759da7dddc05a5c4510
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In Electronic, Optical and Magnetic Materials
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Kohei Sasaki
- Z. Galazka
- H. von Wenckstern
- Lei Yuan
- Yuming Zhang
In Materials Chemistry
- Masataka Higashiwaki
- Akito Kuramata
- Shigenobu Yamakoshi
- Kohei Sasaki
- Z. Galazka
- H. von Wenckstern
- Lei Yuan
- Yuming Zhang
Citations in the corpus
- First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes (2017, background): “In the past few years, several researches on development of Ga2O3 Schottky barrier diodes (SBDs) were reported [12]–[17].”