Y. Oshima

Electronic, Optical and Magnetic Materials · with Ahmadi · 2003–2019

A researcher in the Science corpus: 6 papers; trusts 6 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electronic, Optical and Magnetic Materials — 87 citations into it
• Materials Chemistry — 80 citations into it

Whom Y. Oshima trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Masataka Higashiwaki
2. Kohei Sasaki
3. S. Fujita
4. Akito Kuramata

Who trusts Y. Oshima overall

1. Masataka Higashiwaki
2. Z. Galazka
3. H. von Wenckstern
4. E. Ahmadi

Papers from Y. Oshima's perspective

Ordered by how strongly the researchers Y. Oshima trusts endorse each paper. Same corpus, a different order for every researcher.

1. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
2. Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
3. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
4. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
5. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
6. State-of-the-art technologies of gallium oxide power devices
7. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
8. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
9. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
10. Semiconductor Power Devices: Physics, Characteristics, Reliability

Their papers

• Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates (2015) — 150 citations
• Materials issues and devices of α- and β-Ga2O3 (2019) — 224 citations
• Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (2017) — 133 citations
• Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2017) — 155 citations
• Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy (2015) — 231 citations
• Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation (2003) — 229 citations