Phase transitions in ferroelectric silicon doped hafnium oxide

By T. Böscke, S. Teichert, D. Bräuhaus, Johannes Müller, U. Schröder, Ulrich Böttger, Thomas Mikolajick. 2011

336 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/59b11e66a460f46e8f72d906e0ee63b05e9c784b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Nanbo Gong
4. T. Ma
5. Stefan Mueller
6. Min Hyuk Park
7. Sergej Starschich
8. C. S. Hwang

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. T. Ma
4. Nanbo Gong
5. Min Hyuk Park
6. Sergej Starschich
7. C. S. Hwang

Citations in the corpus

• Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications (2013, result): “This behavior was anticipated due to the fact that not fully polarized states are expected to be more prone to thermal depolarization than capacitors which had previously been MUELLER et al.: RELIABILITY CHARACTERISTICS OF FERROELECTRIC Si:HfO2 FILMS 95 written into a saturated state.”
• Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, methodology): “The recent advent of HfO2-based ferroelectrics have brought new life to FeFET-based 1-T memory technology, and 10-year extrapolated retention time has been demonstrated on a 28nm FeFET [8]–[12].”