A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

By S. Dunkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Muller, T. Melde and 13 more. International Electron Devices Meeting, 2017

451 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dc6239c0e3650926c5bbd023dec4f4121d9cc896

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Thomas Mikolajick
2. Uwe Schroeder
3. Stefan Slesazeck
4. Sayeef Salahuddin
5. Supriyo Datta
6. Mark S. Lundstrom
7. Eric Pop
8. Dmitri E. Nikonov

In Materials Chemistry

1. Uwe Schroeder
2. Stefan Slesazeck
3. Thomas Mikolajick
4. Supriyo Datta
5. Sayeef Salahuddin
6. Min Hyuk Park

Citations in the corpus

• The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “However, a typical NVM endurance of about 105 write cycles is shown at the array level [71], [76].”
• The era of hyper-scaling in electronics (2018, methodology): “…spin-transfer torque magnetic random-access memory (STT-MRAM) 32,33 ; ferroelectric random-access memory (FeRAM) with one transistor — one capacitor configuration 34 ; single-transistor FeFET memory 35,36 ; phase-change random-access memory (PCRAM) 37,38 ; and resistive random-access memory (RRAM).”