Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

By M. Pešić, Michael J. Hoffmann, C. Richter, Thomas Mikolajick, Uwe Schroeder. 2016

207 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cb673427079b4274884d77926534babe824ed401

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Stefan Slesazeck
7. Min Hyuk Park
8. Sergej Starschich

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Tony Schenk
5. James M. LeBeau
6. E. Grimley
7. Min Hyuk Park

Citations in the corpus

• The Past, the Present, and the Future of Ferroelectric Memories (2020, methodology): “In the concept of the antiferroelectric RAM (AFeRAM) [52], [53], a built-in bias field is used to shift the hysteresis, so that at 0-V applied bias,”
• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, background): “Experiment and theory point to an orthorhombic switching pathway through the tetragonal phase, and in certain instances the tetragonal-to-orthorhombic transition might be transient during the application of an electric field.(3) Recently, studies have also highlighted the structural similarities bet”