Stabilizing the ferroelectric phase in doped hafnium oxide

By Michael J. Hoffmann, Uwe Schroeder, Tony Schenk, Takao Shimizu, H. Funakubo, O. Sakata, D. Pohl, M. Drescher, C. Adelmann, Robin Materlik and 2 more. 2015

523 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/dfaeb1541e07e92129fbf5e2618709a884588818

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park
7. Sergej Starschich
8. Stefan Slesazeck

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Tony Schenk
4. James M. LeBeau
5. E. Grimley
6. Min Hyuk Park

Citations in the corpus

• Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017, methodology): “27 nm Gd:HfO2 capacitors with 10 nm TiN electrodes were grown using atomic layer deposition as described previously.(47) Lamella were prepared for scanning transmission electron microscopy (STEM) by focused ion beam from both cycled and pristine devices using an FEI Quanta.”