Patrick Polakowski
Electrical and Electronic Engineering · 2012–2018
A researcher in the Science corpus: 10 papers; trusts 2 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 61 citations into it; #6,770 of 16,539 by trust here, #3,792 by citations
- Materials Chemistry — 48 citations into it; #5,057 of 11,513 by trust here, #4,939 by citations
Whom Patrick Polakowski trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Patrick Polakowski overall
Papers from Patrick Polakowski's perspective
Ordered by how strongly the researchers Patrick Polakowski trusts endorse each paper. Same corpus, a different order for every researcher.
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (IEEE Transactions on Electron Devices)
- A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (International Electron Devices Meeting)
- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$ (IEEE Electron Device Letters)
- Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (IEEE Electron Device Letters)
- VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices (IEEE Electron Device Letters)
- A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation (IEEE Electron Device Letters)
- Ferroelectricity in hafnium oxide thin films
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
Their papers
- A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (2016) — 356 citations
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013) — 375 citations
- A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond (2017) — 451 citations
- Novel ferroelectric FET based synapse for neuromorphic systems (2017) — 200 citations
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide (2014) — 283 citations
- Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG (2012) — 264 citations
- Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects (2015) — 376 citations
- High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018) — 185 citations
- 14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications (2017) — 169 citations
- Ferroelectricity in undoped hafnium oxide (2015) — 371 citations