Ferroelectricity in Simple Binary ZrO2 and HfO2.

By Johannes Müller, T. Böscke, U. Schröder, Stefan Mueller, D. Bräuhaus, Ulrich Böttger, L. Frey, Thomas Mikolajick. Nano letters (Print), 2012

1,541 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/36804402a5834490932a15052b1334e1c853c3d8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Asif Islam Khan
2. Chenming Calvin Hu
3. Cheng-I Lin
4. Sayeef Salahuddin
5. Daniele Ielmini
6. H. Philip Wong

In Materials Chemistry

1. Sayeef Salahuddin

Citations in the corpus

• Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics (2015, background): “Examples are tetragonal ZrO2 [10]–[12], cubic Y:HfO2 [13], tetragonal Si:HfO2 [14], and tetragonal Al:HfO2 [15].”