Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
By J. Müller, E. Yurchuk, T. Schlösser, J. Paul, R. Hoffmann, S. Müller, Dominik Martin, Stefan Slesazeck, Patrick Polakowski, J. Sundqvist and 8 more. Symposium on VLSI Technology, 2012
264 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/29be6a70e9fa1ea0c7cc762ab5aeaad8a2b60c6a
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In Electrical and Electronic Engineering
- Uwe Schroeder
- Thomas Mikolajick
- Nanbo Gong
- T. Ma
- Patrick Polakowski
- Stefan Mueller
- Min Hyuk Park
- Stefan Slesazeck
Citations in the corpus
- A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation (2018, background): “The recent demonstration of HfO2 based field effect transistors (FE-HfO2 FETs) using 28nm technology has shown the possibility of fabricating aggressively scaled FeFETs that are CMOS compatible, and offer attractive features such as low power, fast switching speed, and scalability [2].”
- Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories (2016, methodology): “node has been recently demonstrated for FeFETs based on HfO2 ferroelectrics [2].”
- Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications (2013, methodology): “suitability for memory applications like the ferroelectric field effect transistor (FeFET) [6]–[8] or the ferroelectric random”
- High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, methodology): “Highly scalable HfO2-based FeFET devices have been demonstrated [2] and are considered as a promising alternative for perovskite-based FeFETs due to their scalable implementation into CMOS technology [3], thereby providing fully compati-”