Impact of different dopants on the switching properties of ferroelectric hafniumoxide

By Uwe Schroeder, E. Yurchuk, Johannes Müller, Dominik Martin, Tony Schenk, Patrick Polakowski, C. Adelmann, M. Popovici, Sergei V. Kalinin, Thomas Mikolajick. 2014

283 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/cbc7e369629eddc193beb5a99d83a87c1eb37303

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Slesazeck
4. Nanbo Gong
5. T. Ma
6. Lain‐Jong Li
7. Min Hyuk Park
8. Tony Schenk

In Materials Chemistry

1. Uwe Schroeder
2. Stefan Slesazeck
3. Thomas Mikolajick
4. T. Ma
5. Nanbo Gong
6. Lain‐Jong Li
7. Chaojie Cui
8. Fei Xue

Citations in the corpus

• Two-dimensional materials with piezoelectric and ferroelectric functionalities (2018, background): “In addition, various defects such as oxygen vacancies is inevitable during high temperature thin film growth and nanostructure fabrication, which could deteriorate the intrinsic ferroelectric properties.92 Recently, lots of attention has also been devoted to simple binary oxides of HfO2 and ZrO2, 93”
• Why Is FE–HfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective (2016, background): “In other word, even though remnant polarization in an “engineered” MFM structure of HfO2 based ferroelectric could be made larger than 10μC/cm2 [8], [11], [23], [24], it does not pay to increase the remnant polarization beyond ∼10μC/cm2 from the MW point of view.”