Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

By E. Yurchuk, J. Muller, S. Muller, J. Paul, M. Pešić, R. van Bentum, Uwe Schroeder, Thomas Mikolajick. IEEE Transactions on Electron Devices, 2016

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Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance (2018, background): “This is consistent with the estimated defect densities in HfO2 [5] Fig.”
The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “This, in turn, leads to strong charge trapping that will eventually degrade the interface oxide and limit the cycling endurance [74], [75].”
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, background): “Hence, the so far observed FeFET endurance was limited to 104 cycles, which is intrinsically related to the MFIS gate-stack reliability [7] accompanied with an increased gate leakage and charge trapping in the HfO2 layer upon long cycling.”
A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation (2018, result): “results are consistent with previously reported endurance characteristics of Si:HfO2-based FeFETs that have similar device parameters [4], [5].”