Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

By J. Müller, T. Böscke, U. Schröder, R. Hoffmann, Thomas Mikolajick, L. Frey. IEEE Electron Device Letters, 2012

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d1873e20303e277f09a1342f0c419b2ffeefeea9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Robin Materlik
2. Alfred Kersch
3. Patrick Polakowski
4. C. Kunneth
5. Thomas Mikolajick
6. Uwe Schroeder

In Materials Chemistry

1. Robin Materlik
2. Alfred Kersch
3. Patrick Polakowski
4. C. Kunneth
5. Uwe Schroeder
6. Thomas Mikolajick

Citations in the corpus

• High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty (2018, background): “ture [19] and at high temperature with accelerated testing [20].”
• The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model (2015, background): “Zwanziger, “ABINIT: First-principles approach to material and nanosystem properties,” Computer Physics Communications 180 (12), 2582–2615 (2009).”