Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films

By Stefan Mueller, Johannes Mueller, Aarti Singh, S. Riedel, J. Sundqvist, Uwe Schroeder, Thomas Mikolajick. 2012

750 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/47f7f2380bba5a3ddc5d49c9b81c7cfa85301df3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. Stefan Mueller
4. Min Hyuk Park
5. Sergej Starschich
6. C. S. Hwang
7. Tony Schenk
8. Stefan Slesazeck

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Min Hyuk Park
4. Sergej Starschich
5. C. S. Hwang

Citations in the corpus

• Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications (2013, background): “THE RECENT discovery of ferroelectricity in hafnium oxide thin films [1]–[5] has spurred the interest in its”