Umesh K. Mishra
Condensed Matter Physics · 2000–2018
A researcher in the Science corpus: 57 papers; trusts 10 researchers and is trusted by 34 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 204 citations into it; #83 of 1,948 by trust here, #7 by citations
- Electronic, Optical and Magnetic Materials — 147 citations into it; #218 of 2,886 by trust here, #645 by citations
- Electrical and Electronic Engineering — 122 citations into it; #1,340 of 16,539 by trust here, #1,386 by citations
- Materials Chemistry — 114 citations into it
- Atomic and Molecular Physics, and Optics — 51 citations into it; #7,048 of 7,135 by trust here, #1,092 by citations
- Mechanics of Materials — 45 citations into it
Whom Umesh K. Mishra trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Umesh K. Mishra overall
- B. Baliga
- Srabanti Chowdhury
- Yuhao Zhang
- Jie Hu
- Matteo Meneghini
- J. L. Lyons
- Sourabh Khandelwal
- Xiucheng Huang
- Gaudenzio Meneghesso
- Muhammad Tahir
Papers from Umesh K. Mishra's perspective
Ordered by how strongly the researchers Umesh K. Mishra trusts endorse each paper. Same corpus, a different order for every researcher.
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
- AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
Their papers
- AlGaN/GaN HEMTs-an overview of device operation and applications (2002) — 2,031 citations
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001) — 1,411 citations
- AlGaN/AlN/GaN high-power microwave HEMT (2001) — 460 citations
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) — 400 citations
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) — 327 citations
- Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008) — 139 citations
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) — 145 citations
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (2010) — 148 citations
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) — 182 citations
- Very-high power density AlGaN/GaN HEMTs (2001) — 539 citations
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) — 458 citations
- Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) — 160 citations
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors (2004) — 175 citations
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) — 667 citations
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012) — 166 citations
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) — 201 citations
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) — 205 citations
- Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (2013) — 182 citations
- The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors (2004) — 132 citations
- GaN-Based RF Power Devices and Amplifiers (2008) — 1,645 citations