Matteo Meneghini

Condensed Matter Physics · 2008–2020

A researcher in the Science corpus: 14 papers; trusts 7 researchers and is trusted by 2 researchers here, as inferred from the citation graph.

Subfields

Whom Matteo Meneghini trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Jungwoo Joh
  2. Gaudenzio Meneghesso
  3. E. Fred Schubert
  4. Michael J. Uren
  5. J. D. del Alamo
  6. Enrico Zanoni
  7. Umesh K. Mishra
  8. Martin Kuball
  9. Michael R. Krames
  10. Giovanni Verzellesi

Who trusts Matteo Meneghini overall

  1. S. Karpov

Papers from Matteo Meneghini's perspective

Ordered by how strongly the researchers Matteo Meneghini trusts endorse each paper. Same corpus, a different order for every researcher.

  1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
  2. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
  3. Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
  4. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
  5. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
  6. Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
  7. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (IEEE transactions on device and materials reliability)
  8. Carbon impurities and the yellow luminescence in GaN
  9. 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
  10. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (IEEE Electron Device Letters)

Their papers