The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

By B. Green, K. Chu, E. Chumbes, J. Smart, J. Shealy, L. Eastman. IEEE Electron Device Letters, 2000

734 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/288d8c0eb19178f484c50793e4442ec02cae4704

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In Condensed Matter Physics

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Citations in the corpus

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (2001, methodology): “This effect can be mitigated by the deposition of a layer of silicon nitride on the device [2].”
A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “Surface passivation [130] and field-plate [131] are two effective solutions for this issue.”
AlGaN/AlN/GaN high-power microwave HEMT (2001, background): “to eliminate DC to RF dispersion [9], [10].”
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “reducing the density of surface traps [31], [32], introducing positive charges [17], passivating stress-generated traps or strengthening material bonds [8], or inducing a discharge path”
GaN-Based RF Power Devices and Amplifiers (2008, methodology): “One was the introduction of the Si xN passivation in 2000 [ 38 ], [39], which effectively reduced DC-to-RF dispersion caused by surface trap states, thereby resulting in a significant increase in output power to 9 and 11 W/mm [40], [41].”
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001, result): “Similar improvements were recently reported [ 14 ].”
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, background): “Subsequent device structure and processing enhancements led to the first results of passivated GaN HEMTs with results showing the clear thermal advantage of using SiC as a substrate instead of sapphire for high total RF power [14] and [15].”
Current instabilities in GaN-based devices (2001, background): “Indeed recent experiments with passivated devices indicate that the countercharge may be fixed within the dielectric passivation [ 10 ].”
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003, background): “This results in a much lower output power density than expected from the static current‐voltage ( ‐ ) characteristics [ 6 ]‐[8].”