Gaudenzio Meneghesso

Condensed Matter Physics · 2004–2018

A researcher in the Science corpus: 17 papers; trusts 8 researchers and is trusted by 3 researchers here, as inferred from the citation graph.

Subfields

Whom Gaudenzio Meneghesso trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Jungwoo Joh
  2. Umesh K. Mishra

Who trusts Gaudenzio Meneghesso overall

  1. Matteo Meneghini
  2. Jungwoo Joh
  3. J. D. del Alamo
  4. Enrico Zanoni
  5. Giovanni Verzellesi

Papers from Gaudenzio Meneghesso's perspective

Ordered by how strongly the researchers Gaudenzio Meneghesso trusts endorse each paper. Same corpus, a different order for every researcher.

  1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
  2. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
  3. 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
  4. 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
  5. Trapping effects in GaN and SiC microwave FETs (Proceedings of the IEEE)
  6. Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors (International Electron Devices Meeting)
  7. Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (IEEE Electron Device Letters)
  8. Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors (IEEE Electron Device Letters)
  9. Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices (IEEE Transactions on Electron Devices)
  10. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics (IEEE Electron Device Letters)

Their papers