Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

By Tomás Palacios, S. Rajan, A. Chakraborty, S. Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. IEEE Transactions on Electron Devices, 2005

160 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fada209407a47a7980d6d761832a9ae852d08eed

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Umesh K. Mishra
2. Steven P. DenBaars

In Condensed Matter Physics

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Thomas J. Brazil
4. Chris Oxley
5. Ronán Brady
6. B. Baliga
7. J. Speck
8. Srabanti Chowdhury

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Thomas J. Brazil
4. Chris Oxley
5. Ronán Brady
6. Anding Zhu

Citations in the corpus

• An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices (2008, background): “Their importance and subsequent impact on the linearity performance in terms of the measured transconductance and cutoff frequency has been demonstrated [ 33 ], [34].”
• High-performance E-mode AlGaN/GaN HEMTs (2006, background): “The decrease in CGS at high gate voltages may be due to the effect of gate leakage or increase in the source access resistance as described in [ 15 ].”