AlGaN/AlN/GaN high-power microwave HEMT

By Likun Shen, S. Heikman, B. Moran, R. Coffie, N. Zhang, D. Buttari, I. Smorchkova, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. IEEE Electron Device Letters, 2001

460 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/781ccc8b6a6aa4bd4c8189a32aff13cfb130e2bb

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Umesh K. Mishra
2. Steven P. DenBaars
3. D. Fleetwood

In Condensed Matter Physics

1. Umesh K. Mishra
2. Srabanti Chowdhury
3. B. Swenson
4. Steven P. DenBaars
5. Stacia Keller
6. Thomas J. Brazil
7. Chris Oxley
8. Ronán Brady

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. D. Fleetwood
3. Srabanti Chowdhury
4. B. Swenson
5. Steven P. DenBaars
6. Jim W. Milligan
7. S. T. Sheppard
8. Thomas J. Brazil

Citations in the corpus

• Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003, methodology): “Fig. 2. Schematic conduction band diagram of an AlGaN/AlN/GaN HEMT [ 9 ].”
• AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006, background): “The improved growth in combination with the introduction of new device structures such as an AlN interlayer between the barrier and the buffer [1] and field-plated technology [2], [3] has allowed devices with an output power in excess of 30 W/mm at 4 GHz [4], more than one order of magnitude higher ”
• Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008, methodology): “layer (1400 Å) followed by 6 Å AlN (to reduce alloy scattering [9]) and 250 Å Al0.”
• A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, background): “1, the device is fabricated with ohmic contacts that are formed directly on the top AlGaN layer.”
• Nanowire Transistor Performance Limits and Applications (2008, unknown): “shell [93].”
• An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices (2008, background): “Furthermore, enhanced carrier-confinement processes, whereby both piezoelectric and spontaneous polarizations contribute to the 2-DEG layer formation, induce improved sheet carrier densities in excess of 2 10 e/cm [7] when compared with GaAs, typically 2 10 e/cm .”
• A review of GaN HEMT broadband power amplifiers (2020, unknown): “The high sheet charge results in large current densities and minimizing the transistor area results in high watts per millimetre of gate periphery [38,39].”