30-W/mm GaN HEMTs by field plate optimization

By Yi-feng Wu, A. Saxler, M. Moore, R. Smith, S. Sheppard, P. Chavarkar, T. Wisleder, U. K. Mishra, Primit Parikh. IEEE Electron Device Letters, 2004

1,053 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/2ca74de4a472becd6667667960d29d6d2d773d86

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Citations in the corpus

High-power AlGaN/GaN HEMTs for Ka-band applications (2005, background): “More than 32 W/mm have already been reported at 4 GHz [3].”
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006, background): “G aN-BASED transistors are very promising devices for high-power and high-frequency applications [1].”
Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006, background): “For instance, AlGaN/GaN heterojunction field-effect transistors (HFETs) devices were reported to operate at power densities as high as tens of Watt per millimeter [3].”
AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006, background): “Recently, Higashiwaki et al. [5] have reported a current gain cut-off frequency of 163 GHz and a maximum power gain cut-off frequency of 184 GHz in standard AlGaN/GaN HEMTs with a gate length of 50 nm.”
GaN-Based RF Power Devices and Amplifiers (2008, background): “This has been effective in improving large signal (or power) performance and enabling high voltage operation as seen in Fig. 6(a) and (b) [ 44 ].”
Thermal resistance calculation of AlGaN-GaN devices (2004, neutral): “, 30 W/mm [1], have been obtained, usually from single-finger (or double-finger) devices,”
Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005, background): “Power densities higher than 32 W/mm with 54% power added efficiency have been obtained in field-plated devices at 4 GHz [ 2 ]; noise figures lower than 0.6 dB at 10 GHz have been measured in devices with a gate length of 0.15 m [3]; and two-tone linearity measurements have shown up to 10 W/mm of lin”
12 W/mm AlGaN-GaN HFETs on silicon substrates (2004, neutral): “[2].”
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “1 GHz [2] and 40 W/mm at 4 GHz [3]; GaAs values are in the range 0.”