AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

By I. Smorchkova, L. Chen, T. Mates, Likun Shen, S. Heikman, B. Moran, S. Keller, Steven P. DenBaars, J. Speck, Umesh K. Mishra. 2001

322 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0b733b224c6a1722ff1d1168b8c1f87ed3e121e0

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In Condensed Matter Physics

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Stacia Keller
4. Likun Shen
5. B. Baliga
6. Gaudenzio Meneghesso
7. Enrico Zanoni
8. J. Speck

In Electronic, Optical and Magnetic Materials

1. Umesh K. Mishra
2. B. Baliga

In Materials Chemistry

1. Umesh K. Mishra
2. Steven P. DenBaars

Citations in the corpus

• AlGaN/AlN/GaN high-power microwave HEMT (2001, methodology): “The detailed study of the AlGaN/AlN/GaN heterojunction will be published separately in [4]; the role of the silicon dopant is still under investigation.”