Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

By C. Poblenz, P. Waltereit, S. Rajan, S. Heikman, Umesh K. Mishra, J. Speck. 2004

175 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/76689085241d96f43de1e8a6d21072ac36dc1adc

How researchers see this paper

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In Condensed Matter Physics

1. Michael J. Uren
2. Shu Yang
3. Kuang Sheng
4. Shaowen Han
5. Martin Kuball
6. Oliver Hilt
7. Kevin J. Chen

In Electrical and Electronic Engineering

1. Michael J. Uren
2. Martin Kuball
3. Oliver Hilt
4. Shu Yang
5. Kuang Sheng
6. Kevin J. Chen
7. Shaowen Han

In Electronic, Optical and Magnetic Materials

1. Kevin J. Chen
2. Shu Yang
3. Kuang Sheng
4. Shaowen Han

Citations in the corpus

• AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ (2010, background): “Carbon doping is thus one of the favorite choices to enhance the VBROFF of power switching and microwave devices [12], [13], [17], [18].”
• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “The C compensation doping, which can induce deep-level acceptor traps [24], is essential to obtain low leakage through the buffer/SRL [44], [47], [48].”
• Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012, background): “but nevertheless has given excellent isolation and power device performance [12], [13].”