Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
By A. Chakraborty, B. Haskell, Stacia Keller, J. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra. 2005
205 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ef5098c71517e7f34e2531eee921082ba9166969
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “became longer toward the blue spectral region [95], [96], as shown in Fig.”
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008, background): “The typical current density in LED devices ranges from 20 up to 200 A cm [23]–[25], which corresponds to the typical carrier density ranging from 2–5 10 cm up to 1 10 cm [25]–[27].”
- History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination (2013, methodology): “Nonpolar/Semipolar GaN-Based LEDs First LEDs with an emission wavelength of 450 nm were demonstrated using freestanding GaN substrates with a stacking fault density of 1 10(5) cm 1 and a threading dislocation density of 4 10(9) cm 2 by the UCSB group [49] in 2005.”