GaN-Based RF Power Devices and Amplifiers

By Umesh K. Mishra, Likun Shen, Thomas E. Kazior, YiFeng Wu. Proceedings of the IEEE, 2008

1,645 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d233e83f9259a308e110fe870767dfa19fe21302

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Yogesh Singh Chauhan
2. Sourabh Khandelwal
3. Tor A. Fjeldly
4. C. G. Van de Walle
5. J. L. Lyons
6. S. Karpov

In Condensed Matter Physics

1. Yogesh Singh Chauhan
2. Gaudenzio Meneghesso
3. Matteo Meneghini
4. Sourabh Khandelwal
5. Tor A. Fjeldly
6. Enrico Zanoni
7. Giovanni Verzellesi
8. C. G. Van de Walle

In Electrical and Electronic Engineering

1. Matteo Meneghini
2. Gaudenzio Meneghesso
3. J. L. Lyons
4. Enrico Zanoni
5. C. G. Van de Walle

Citations in the corpus

• Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008, background): “can represent a major challenge due to the peculiarities of the physics of gallium nitride devices, to material imperfection, to the stability of fabrication processes [29].”
• A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices (2011, background): “A lGaN/GaN high-electron mobility transistor (HEMT) devices are considered to be very promising candidates for high-speed and high-power applications [1], [2].”
• A review of GaN HEMT broadband power amplifiers (2020, neutral): “Si-based technology has several limitations as compared to the SiC-based technology especially for MMIC realizations due to the higher losses of the passive components and the lower working frequency of the active devices [187,188].”
• Computationally predicted energies and properties of defects in GaN (2017, background): “The advent of III-nitrides as semiconductor materials has enabled the new technology of solid-state lighting(1) and opened new directions in established technologies such as solar cells,(2) and power electronics.(3) GaN and related materials such as InN, AlN, and BN are also being investigated for a”
• Gallium Nitride as an Electromechanical Material (2014, background): “in the domain of high-power and high-frequency operation (See Table IV) [6], [52], [53].”
• Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices (2012, background): “IN RECENT years, AlGaN/GaN high electron mobility transistor (HEMT) devices have emerged as promising candidates for high-speed and high-power applications [1], [2], owing to their properties such as high breakdown voltage, high charge density, and high electron mobility [3]–[5].”