YiFeng Wu
Condensed Matter Physics · 2001–2017
A researcher in the Science corpus: 7 papers; trusts 3 researchers and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 31 citations into it; #964 of 1,948 by trust here, #201 by citations
- Electrical and Electronic Engineering — 29 citations into it; #8,378 of 16,539 by trust here, #3,951 by citations
- Electronic, Optical and Magnetic Materials — 15 citations into it
Whom YiFeng Wu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts YiFeng Wu overall
Papers from YiFeng Wu's perspective
Ordered by how strongly the researchers YiFeng Wu trusts endorse each paper. Same corpus, a different order for every researcher.
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
- SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
- High-power AlGaN/GaN HEMTs for Ka-band applications (IEEE Electron Device Letters)
- Very-high power density AlGaN/GaN HEMTs
- Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
- 40-W/mm Double Field-plated GaN HEMTs (Device Research Conference)
Their papers
- A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz (2008) — 248 citations
- AlGaN/GaN HEMTs-an overview of device operation and applications (2002) — 2,031 citations
- 40-W/mm Double Field-plated GaN HEMTs (2006) — 367 citations
- GaN-on-Si Power Technology: Devices and Applications (2017) — 1,258 citations
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) — 182 citations
- Very-high power density AlGaN/GaN HEMTs (2001) — 539 citations
- GaN-Based RF Power Devices and Amplifiers (2008) — 1,645 citations