AlGaN/GaN HEMTs-an overview of device operation and applications

By Umesh K. Mishra, Primit Parikh, YiFeng Wu. Proceedings of the IEEE, 2002

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GaN-Based RF Power Devices and Amplifiers (2008, background): “GaAs) [ 2 ]. The high output power density allows the fabrication of much smaller size devices with the same output power.”
AlGaN-GaN double-channel HEMTs (2005, result): “Ten times greater output power density has been demonstrated in AlGaN–GaN HEMTs compared with conventional AlGaAs–GaAs HEMTs [2]–[5].”
Gallium Nitride as an Electromechanical Material (2014, background): “in the domain of high-power and high-frequency operation (See Table IV) [6], [52], [53].”
Evaluation of the switching characteristics of a gallium-nitride transistor (2011, background): “From the works presented in [4-15], it can be seen that GaN devices are reaching the point of maturity where broader investigation of its impact on switching converters is possible and necessary [16].”
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (2006, background): “eration high-power devices for the RF and power electronics systems [1], [2].”
Gallium nitride devices for power electronic applications (2013, background): “Interest in gallium nitride grew in the 1990s due its potential for applications in the lighting and cellular amplifier markets [11, 12].”