High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

By W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, H. Ohashi. 2003

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006, background): “Breakdown voltages as high as 900 V with low ON-resistance Ron have been demonstrated by using multiple field plates [2] and backside field plate [3].”
A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz (2008, background): “Their benefit to lower frequency (in the megahertz range) power switching applications has also been recognized [ 6 ].”
High-voltage normally off GaN MOSFETs on sapphire substrates (2005, background): “In addition, while high-voltage AlGaN–GaN HFETs have been fabricated with field-plates to block high voltages [3], [4], these devices have been normally on devices.”
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications (2006, background): “Whereas most of the AlGaN/GaN HEMTs demonstrated so far had normally on (depletion mode) characteristics with gate threshold voltage under V [6], [7], normally off (enhancement mode) characteristics are strongly required for”
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation (2007, background): “Most of the reported AlGaN/GaN HFETs are the normally-on type taking advantage of the inherent high sheet carrier density caused by the built-in polarization electric field [1], [ 2 ].”