Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
By Srabanti Chowdhury, Umesh K. Mishra. IEEE Transactions on Electron Devices, 2013
182 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/f37829609af4dd0e04190a80087643750461de41
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- GaN-on-Si Vertical Schottky and p-n Diodes (2014, background): “The higher Von in p-n diode is expected due to the large bandgap of GaN [4], and the higher”