High breakdown GaN HEMT with overlapping gate structure

By N. Zhang, S. Keller, G. Parish, S. Heikman, Steven P. DenBaars, Umesh K. Mishra. IEEE Electron Device Letters, 2000

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate (2001, methodology): “This and similar calculations for other structures show that HEMT with a FP can work up to GHz frequencies. This is also supported by experiment [ 4 ].”
30-W/mm GaN HEMTs by field plate optimization (2004, methodology): “with GaN HEMTs for high-voltage switching applications [6].”
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004, methodology): “They also used an overlapping gate [12] and demon-”
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior (2003, background): “Since the source/drain contact area dominates the fabricated device area, the on-resistance was larger than the previous reported data [7], [ 8 ].”
The 1.6-kV AlGaN/GaN HFETs (2006, background): “The gate–drain spacing LGD is the critical dimension affecting the breakdown voltage [3]–[8], [14] as it accommodates most of the applied voltage.”
10-W/mm AlGaN-GaN HFET with a field modulating plate (2003, background): “AlGaN–GaN FETs, however, only a few studies have been reported on FP structure to improve [15], [16], and no work has been reported on RF power characteristics.”
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (2002, methodology): “5m using an overlapping gate structure was reported recently [4].”