Stacia Keller
Condensed Matter Physics · 2001–2018
A researcher in the Science corpus: 21 papers; trusts 2 researchers and is trusted by 8 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 99 citations into it; #576 of 1,948 by trust here, #74 by citations
Whom Stacia Keller trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Stacia Keller overall
Papers from Stacia Keller's perspective
Ordered by how strongly the researchers Stacia Keller trusts endorse each paper. Same corpus, a different order for every researcher.
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (IEEE Electron Device Letters)
- High breakdown GaN HEMT with overlapping gate structure (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
- AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (IEEE Electron Device Letters)
- First-principles calculations for defects and impurities: Applications to III-nitrides
- Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
Their papers
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001) — 1,411 citations
- AlGaN/AlN/GaN high-power microwave HEMT (2001) — 460 citations
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) — 400 citations
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) — 327 citations
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) — 145 citations
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) — 458 citations
- Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) — 160 citations
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) — 667 citations
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) — 205 citations
- N-polar GaN epitaxy and high electron mobility transistors (2013) — 200 citations
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) — 408 citations
- Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) — 219 citations
- Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002) — 364 citations
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) — 197 citations
- Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018) — 155 citations
- High internal and external quantum efficiency InGaN/GaN solar cells (2011) — 221 citations
- Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth (2010) — 140 citations
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures (2009) — 193 citations
- Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition (2009) — 214 citations
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006) — 368 citations