10-W/mm AlGaN-GaN HFET with a field modulating plate

By Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, Masaaki Kuzuhara. IEEE Electron Device Letters, 2003

270 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/5faf96c31acccc691dc68b74d3e5995545495d3a

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Citations in the corpus

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance (2011, background): “effectively suppress the dc-to-RF dispersion in microwave GaN transistors [10], [11].”
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior (2003, result): “Fig. 3(a) shows the relation between the breakdown voltage and the field plate length . Although the crystal quality and surface state were not especially improved in the fabricated device, the simulation results show good agreement with the experimental results, and the relation between the breakdo”
30-W/mm GaN HEMTs by field plate optimization (2004, methodology): “3 W output power at 2 GHz using a 1-mm-wide device on SiC substarte [5].”
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006, background): “885681 electric field values can be reached, especially in conventional planar structures that do not use field-plate [3] or recessed-gate [4] technologies.”
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006, background): “silicon or GaAs counterparts have been demonstrated [1]–[4].”
AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006, background): “The improved growth in combination with the introduction of new device structures such as an AlN interlayer between the barrier and the buffer [1] and field-plated technology [2], [3] has allowed devices with an output power in excess of 30 W/mm at 4 GHz [4], more than one order of magnitude higher ”
High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency (2011, background): “ALLIUM nitride high-electron mobility transistors (HEMTs) are great candidates in the field of high-power electronics [ 1 ]‐[4].”
GaN-Based RF Power Devices and Amplifiers (2008, background): “Another was the adoption of the field plate in 2003 [10], [ 42 ].”