The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

By Ramakrishna Vetury, N. Zhang, Stacia Keller, Umesh K. Mishra. 2001

1,411 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/3d142d76509082b1ce2a1a395933c13c1a14e0c3

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In Condensed Matter Physics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress (2003, background): “The recovery observed at energies between 1‐2.95 eV suggests that the energy level of the surface state is smaller than 1 eV. This does not agree with the previous report of [ 7 ] where surface donor energy was estimated to be 1.65 eV, but does not contradict with [14], where 0.4 eV surface donors w”
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation (2003, background): “It was suggested that the surface states in the gate‐drain access region play an important role in this dispersion [ 2 ].”
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses (2019, background): “The increase of dynamic RDSON originates primarily from electron trapping by surface traps in the gate-to-drain access region and buffer traps beneath the two-dimensional electron gas (2DEG) channel induced by gate injection in the OFF state [1] or hot electrons injection from channel during the swi”
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “Surface-induced dynamic RON degradation has been modeled and analyzed in [36]–[38].”
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method (2002, background): “by the positive voltage pulse on the gate) [14], and only first I–V trace”
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction (2013, background): “The reliability of GaN HEMT has greatly improved in recent years: parasitic effects leading to current collapse [7] have been reduced by passivating surface states using deposited or in-situ grown SiN and by controlling the electric field with field-plates [8].”
AlGaN/GaN HEMTs-an overview of device operation and applications (2002, methodology): “The charge distribution is then composed of the polarization dipole and an opposing dipole comprising of a surface hole gas and a two-dimensional electron gas (2DEG) at the heterointerface . In practice, experiments [ 4 ] have shown that the 2DEG is induced before a surface hole gas formation by the”
AlGaN/AlN/GaN high-power microwave HEMT (2001, background): “to eliminate DC to RF dispersion [9], [10].”