CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
By Srabanti Chowdhury, Man Hoi Wong, B. Swenson, Umesh K. Mishra. IEEE Electron Device Letters, 2012
166 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/e51448244ccc61c10ee1835aab358ebfd1aac083
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In Condensed Matter Physics
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Citations in the corpus
- Materials and processing issues in vertical GaN power electronics (2017, methodology): “used Plasma-MBE technique to grow AlGaN/ GaN layers at low temperature (720 °C) [44].”
- Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018, methodology): “Thus, it has been also used to grow the heterojunction channel structures [35] and p-GaN structures [32, 33] in some vertical power devices.”