Very-high power density AlGaN/GaN HEMTs

By YiFeng Wu, D. Kapolnek, J. Ibbetson, Primit Parikh, B. Keller, Umesh K. Mishra. 2001

539 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0a9cede56ffa936cf0ee21b92a7ee670732af6d0

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In Atomic and Molecular Physics, and Optics

Umesh K. Mishra

In Condensed Matter Physics

In Electrical and Electronic Engineering

Citations in the corpus

Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling (2013, background): “Current gain cut-off frequency (fT) as high as >100 GHz and output power density close to 10 W/mm have already been demonstrated with the basic device structure [1]–[2].”
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003, background): “II-NITRIDE-based heterostructure field effect transistors (HFETs) have been the focus of intense research in the last few years [1]‐[ 3 ].”
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (2002, background): “GaN-BASED high electron mobility transistors (HEMTs) are excellent candidates for high power and high frequency applications at elevated temperatures [1]–[3].”
AlGaN/GaN HEMTs-an overview of device operation and applications (2002, background): “Typically, AlGaN/GaN HEMTs have demonstrated high-power densities of 6‐9 W/mm both on sapphire and SiC substrates [11]‐[ 13 ], approaching a one-order improvement over conventional HEMTs and confirming the extremely great potential of this device technology predicted by theory.”
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress (2003, background): “Even though much progress has been achieved in the high-frequency performances [ 3 ]‐[5], there are still some issues, which should be addressed, such as current collapse [6]‐[8], temperature increase due to a large thermal resistance [9], and understandings of transport properties at high temperatu”
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, background): “Subsequent device structure and processing enhancements led to the first results of passivated GaN HEMTs with results showing the clear thermal advantage of using SiC as a substrate instead of sapphire for high total RF power [14] and [15].”
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (2001, background): “GHz has been reported [1] on transistors fabricated on group III nitrides showing the potential of these material systems.”
Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (2002, unknown): “ductivity such as SiC or using flip-chip bonding has therefore proven essential to achieve power densities as high as 9 W/mm for X-band operation [1]–[3].”