High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

By Y. Dora, A. Chakraborty, L. McCarthy, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. IEEE Electron Device Letters, 2006

400 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6224fa1e0dfc3038000d27e3c658d2ff6f983716

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In Condensed Matter Physics

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Citations in the corpus

SiC power devices — Present status, applications and future perspective (2011, background): “In Table II a summary of recent published results from GaN based high voltage devices is given [11-19]”
Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT (2009, background): “W IDE-BANDGAP GaN-based semiconductor materials are attracting a great deal of interest as the preferred materials for devices aimed at high-power, high-frequency, and high-temperature operations [1], [2].”
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (2018, background): “Particularly, [19] and [20] have identified air breakdown as the pre-mature breakdown mechanism that clamped VB R within 300- 400V range.”
Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers (2009, methodology): “high breakdown of 1900 V was achieved using a slant field plate [ 2 ].”
High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology (2010, background): “The figure also shows the highest breakdown voltage reported for an AlGaN/GaN-on-Si HEMT (total epitaxial thickness of 6 μm) [6] and for an AlGaN/GaN-on-SiC transistor [17].”
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance (2008, background): “Considering a contact resistance of 1.1 Ω · mm and a source resistance of 0.066 Ω · mm (LSG = 0.4 µm), the calculated intrinsic transconductance is as high as ∼1 S/mm.”
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, background): “makes GaN devices look attractive in power devices for both lateral [6] and vertical topologies.”