Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

By S. Chichibu, A. Uedono, T. Onuma, B. Haskell, A. Chakraborty, T. Koyama, P. Fini, Stacia Keller, Steven P. DenBaars, J. Speck and 8 more. Nature Materials, 2006

667 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/89fab9b50713ede746a85f2929c6b5104faeb80f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. M. Crawford
4. Shuji Nakamura
5. H. Masui
6. J. Speck
7. B. Baliga
8. Srabanti Chowdhury

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Shuji Nakamura
4. M. Crawford

In Mechanics of Materials

1. Steven P. DenBaars
2. Umesh K. Mishra
3. M. Crawford
4. Shuji Nakamura

Citations in the corpus

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “InGaN-based light emitters, in spite of significant threading dislocation density in the epitaxial structures [44], [45], has been attributed to this effect.”
• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “Thus, carrier localization effects are expected to be minimal on this plane, which prevents high local carrier densities from forming [38], [39].”
• LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “efficiency droop are varied, and include carrier delocalization [ 54 ], screening of excitons [55], defect-assisted tunneling of carriers out of the active region [56], Auger recombination [57], [58], and inefficient carrier injection, particularly due to internal polarization fields [59], [60].”