Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
By Huili Grace Xing, D. Green, Haijiang Yu, T. Mates, P. Kozodoy, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra. 2003
145 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/7d799f2b662741345960317c9d6d30f171153fdc
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
In Electrical and Electronic Engineering
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
In Electronic, Optical and Magnetic Materials
- Tomás Palacios
- Yuhao Zhang
- Min-Chul Sun
- Srabanti Chowdhury
- Umesh K. Mishra
- Daniel Piedra
- B. Swenson
- Man Hoi Wong
Citations in the corpus
- Materials and processing issues in vertical GaN power electronics (2017, background): “Memory effects related to Mg induced Mg out-diffusion into the AlGaN/GaN layers [43], giving rise to reliability issues.”
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012, background): “prevalent memory effect [10] made the devices unreliable as the threshold voltage shifted uncontrollably due to diffusion of Mg upward into the MOCVD-regrown AlGaN/GaN layers needed”