Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

By A. Chakraborty, B. Haskell, S. Keller, J. Speck, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra. 2004

201 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/59db228e30242f06396acd0bb25eac21a6761ccf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura

In Condensed Matter Physics

1. Steven P. DenBaars
2. Umesh K. Mishra
3. Shuji Nakamura
4. H. Masui
5. J. Speck
6. B. Baliga
7. Srabanti Chowdhury

In Electrical and Electronic Engineering

1. Umesh K. Mishra
2. Steven P. DenBaars
3. Shuji Nakamura

Citations in the corpus

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, unknown): “GaN, InGaN/GaN MQW, and LED structures with nonpolar and semipolar orientations of the wurtzite crystals has been explored by the growth of III-N films on various foreign substrates such as (1 1 −2 0) a-plane GaN on a-plane SiC [87] and on (1 0 −1 1) r-plane sapphire [88], and a-plane LED on r-plane”
• Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010, background): “to wait until 2004 for an a-plane LED [26].”