Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress
By M. Ťapajna, R. Simms, Y. Pei, Umesh K. Mishra, Martin Kuball. IEEE Electron Device Letters, 2010
148 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ef84ef70c3cfc29264eff5cc7c2eaf28a086e38d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- J. D. del Alamo
- Alessandro Chini
- Jungwoo Joh
- Umesh K. Mishra
- B. Baliga
In Electrical and Electronic Engineering
- Gaudenzio Meneghesso
- Matteo Meneghini
- Enrico Zanoni
- J. D. del Alamo
- Alessandro Chini
- Jungwoo Joh
- Umesh K. Mishra
- Kei May Lau
Citations in the corpus
- Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements (2013, methodology): “by a polynomial function, and the subsequent extrapolation of time constants from the peaks of the ∂ IDS/∂ log(t)(derivative) curves [17]; 2) the fitting of the data by a function represented”
- A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors (2011, methodology): “This kind of trap was found to increase after device degradation [5], [21], [35], [36].”
- Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method (2011, methodology): “have extensively adopted combined EL and electrical characterization to better understand the behavior of HEMTs under specific operating conditions (see for instance [20], [21]).”