Yuhao Zhang
Electrical and Electronic Engineering · Journal of Physics D: Applied Physics · 2013–2019
A researcher in the Science corpus: 7 papers; trusts 8 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 82 citations into it; #11,125 of 16,539 by trust here, #8,038 by citations
- Condensed Matter Physics — 80 citations into it; #1,313 of 1,948 by trust here, #758 by citations
- Electronic, Optical and Magnetic Materials — 43 citations into it
- Atomic and Molecular Physics, and Optics — 8 citations into it
Whom Yuhao Zhang trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Srabanti Chowdhury
- Min-Chul Sun
- Frank Schwierz
- Umesh K. Mishra
- B. Swenson
- Man Hoi Wong
- Martin Kuball
- Tomás Palacios
- Xiang Gao
- Tohru Oka
Who trusts Yuhao Zhang overall
Papers from Yuhao Zhang's perspective
Ordered by how strongly the researchers Yuhao Zhang trusts endorse each paper. Same corpus, a different order for every researcher.
- AlGaN/GaN current aperture vertical electron transistors with regrown channels
- Fundamentals of Power Semiconductor Devices
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- GaN Power Transistors on Si Substrates for Switching Applications (Proceedings of the IEEE)
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (IEEE Transactions on Electron Devices)
- Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
- High Voltage Vertical GaN p-n Diodes With Avalanche Capability (IEEE Transactions on Electron Devices)
- Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers (IEEE Electron Device Letters)
- 99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors (Applied Power Electronics Conference)
Their papers
- Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors (2013) — 144 citations
- High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates (2017) — 207 citations
- Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting (2019) — 339 citations
- The 2018 GaN power electronics roadmap (2018) — 1,106 citations
- Gallium nitride vertical power devices on foreign substrates: a review and outlook (2018) — 227 citations
- Materials and processing issues in vertical GaN power electronics (2017) — 142 citations
- GaN-on-Si Vertical Schottky and p-n Diodes (2014) — 150 citations