High-power AlGaN/GaN HEMTs for Ka-band applications

By Tomás Palacios, A. Chakraborty, Siddharth Rajan, C. Poblenz, Stacia Keller, Steven P. DenBaars, J. Speck, Umesh K. Mishra. IEEE Electron Device Letters, 2005

458 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/20494fd5e22940ac5b32303ce28656fc0c4a7e2f

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Citations in the corpus

Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (2008, background): “Recent progress in material growth and device fabrication has led these devices to record microwave and millimeter-wave power results [1], [2].”
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018, unknown): “2770087 30 and 40 GHz, respectively [1], [2].”
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices (2007, background): “There are several power results on these materials at millimeter wave with results recently obtained at W-band [ 2 ], [5]–[7].”
AlGaN/GaN HEMT With 300-GHz $f_{\max}$ (2010, background): “these devices have already shown excellent performance, including output power densities in excess of 10 W/mm at 40 GHz [ 1 ] and more than 2 W/mm at 80.5 GHz [2], far surpassing other technologies (e.g., Si, GaAs, and InP).”
High-performance E-mode AlGaN/GaN HEMTs (2006, background): “These devices have a threshold voltage of 0 V, and they show a record fT of 58 GHz and fmax of 108 GHz with a maximum drain current of 550 mA/mm for a VGS = 2 V. Cai et al. [12] have used a fluorine-based plasma treatment followed by a high-temperature annealing to fabricate E-mode devices with a ma”
GaN-Based RF Power Devices and Amplifiers (2008, methodology): “Vol. 96, No. 2, February 2008 | Proceedings of the IEEE 295 Recently, an output power of 10.5 W/mm with a PAE of 34% was demonstrated at 40 GHz at drain bias of 30 V, as shown in Fig. 20 [ 61 ].”
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011, background): “For example, power amplifiers operating at the Ka band (40 GHz) with more than 10 W/mm of output power have been demonstrated [ 1 ], as well as class-AB amplifiers with more than 70% efficiency at 10 GHz [2].”